Abstract
Electronic transport measurements were made on single crystal samples of Ga2Te3. The crystals were prepared by a special design based on Bridgman technique. The influence of temperature on the electrical conductivity, hall effect, hall mobility and carrier concentration was investigated in the temperature range 160K to 440K. The study was carried out with the current following parallel to the c-axis and the magnetic field direction perpendicular to the c-axis. The crystal obtained had n-type conductivity with electron concentration of 3.79 x10(13) cm(-3) at room temperature. The conductivity and hall mobility at 300K were evaluated as 1.479 x 10(-3)Omega(-1)cm(-1) and 239.88 cm(2)/V. sec, respectively. The energy gap width and the depth of donor centre was found to be 1.588 eV and 0.20 eV respectively. The scattering mechanism of the charge carrier was discussed in the same range of temperature. [F. S. Bahabri Electric Characterization of Gallium Resquitelluride Monocrystals Life Science Journal, 2011; 8(4): 714-718] (ISSN: 1097-8135). http://www.lifesciencesite.com.