Abstract
This work investigated the electrical properties in AlGaN/GaN/Si HEMTsgrown by molecular beam epitaxy. The electrical behavior have been investigated using by electric permittivity, modulus formalism and conductance measurements. As has been found from electrical conductance, dispersive behavior is related to barrier inhomogeneity and deep trap in barrier layer. On the other hand, the strain relaxation of charge transport is studied both permittivity and electric modulus formalisms.