Abstract
Gamma irradiation method has been used to change the electrical properties of CdS thin film. A specific dose of
γ
-irradiation increases the activation energy of CdS thin film. In addition,
γ
-irradiation was used to change the sign of Hall coefficient,
R
H
, of CdS thin film from negative to positive irrespective of temperature. The Hall mobility mechanism shows noticeable change after
γ
-irradiation from decreasing to increasing with raising the temperature. In depth, analysis was done using capacitance-voltage measurement in order to realize the modification in the CdS/Si junction band gap after
γ
-irradiation. Several parameters were also studied such as charge carrier concentration,
N
D
, and flat band potential,
V
fb
. The
γ
-irradiation was found to increase the concentration of the deep traps within the band gap of the CdS/Si heterojunction.