Abstract
It is well known that, doping of semiconductor anticipate a huge impact on the AC-DC electric conductivity and its dielectric properties. In our current study, Ni-doped Zn2SnO4 NPs were successfully synthesized via hydrothermal method and then sintered at 500 °C. The XRD pattern exhibits a shift to higher angles which indicating the incorporation of Ni into the ZTO lattice. Moreover, we provide a more general study of electric and dielectric behaviours of Ni-doped Zn2SnO4 as a function of temperature and frequency. The impedance data were fitted using an equivalent circuit which mainly composed of resistors and constant phase elements (CPE). Complex impedance study highlighted the presence of a non-Debye type relaxation. At higher temperature, impedance measurements showed an improvement in the conductivity of ZTO -NPs. While the ZTO-NPs were less resistive before doping, they become more resistant with increasing Ni concentration and frequency. Also, we noted that for low frequencies, Ni doping reduces largely the values of both the imaginary dielectric constant (ε”) and dielectric loss, suggesting that Ni-doped ZTO is an adequate material for low frequency device applications. Further, the imaginary part M″ of the complex electric modulus exhibited a shift toward high frequency upon the increase of temperature in the relaxor peak. Taken together the results obtained, indicating that the modified ZTO, could be a promising candidate for high-frequency device application.