Abstract
Single crystalline molybdenum vanadate nanowires (MoV2O8) were grown on silicon substrates by a simple thermal annealing of spin coated film in the air. The nanowires grown by this method have an average diameter of 100 nm and length between 1- 5 mu m. The nanowires show decent field emission current densities with a turn-on field of similar to 1.9 V/mu m and good emission stability. The four terminal electrical resistivity of a single nanowire was measured to be 70 Omega cm. Thus, we expect that MoV2O8 will be useful as material for future field emitters.