Abstract
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► We develop a dip coating to prepare nanocrystalline n-Zn0.5Cd0.5S/p-Cu2S heterojunction. ► The energy distribution profile of Nss was extracted from I–V measurements. ► Temperature dependence of both ideality factor and barrier height was studied.
Nanocrystalline of n-Zn0.5Cd0.5S/p-Cu2S heterojunctions were successfully prepared by the dip coating method. The surface morphology and the composition analysis were made by scanning electron microscopy (SEM) and energy dispersive x-ray (EDX) technique, respectively. Temperature dependent current–voltage characteristics of the heterojunctions were measured in the temperature range 300–400K with a step of 25K. The current–voltage (I–V) characteristics exhibit electrical rectification behavior. The zero bias barrier height (ΦB0) and the ideality factor (n) are affected by temperature. Interface states at the n-Zn0.5Cd0.5S/p-Cu2S heterojunction play a crucial role in determining the electrical characteristics of the heterojunction. The high value of n can be ascribed to the presence of an interfacial layer. The energy distribution profile of the density of interface states (Nss) was extracted from the forward bias I–V measurements using the width of the depletion region deduced from the capacitance -voltage characteristics at high frequency (1MHz).