Abstract
Thin films of MnClPc/n-Si heterojunctions were performed by the thermal evaporating technique. The C-V and G-V characteristics of the diode under the effect of frequency were investigated. It was found that the capacitance and the conductance spectra are significantly affected by AC-signal at the low-frequency range due to the presence of the interfacial states (N-ss) and the series resistance (R-s) in the depletion region. The I-V characteristics of MnClPc/n-Si under the dark and illumination in the reverse and forward bias were studied. Under the assumption of thermionic emission theory, the rectification ratio (RR = I-F/I-R), the shunted and series resistances, and the ideality factor of the diode were calculated. The evaluated height potential barrier (phi(b)) values from the I-V characteristic and by Cheung and Cheung method were 0.84 and 0.57 eV, respectively. Regarding the power-law (I similar to V-m) relation, the charge transport mechanism is described by the space charge limited current associated with a single trap level. Moreover, the I-V characteristics under the illumination intensity were investigated. Whereas the photosensitivity readings under dark and illumination intensity reveal the probability of using MnClPc/n-Si heterojunctions as a performance photodiode sensor.