Abstract
Semiconducting, nanocrystalline iron disilicide (NC-FeSi2) thin films were deposited on Si(111) Substrates by facing-targets direct-current sputtering at room temperature. The electrical and photovoltaic properties of the n-type NC-FeSi2/p-type Si heterojunctions were measured and investigated. We experimentally proved the possibility of employing this combination in photovoltaics. A large leakage current observed in the current-voltage characteristics. which was predominantly due to the heterojunction interface defects, resulted in a low conversion efficiency.