Abstract
A single crystal of GaInSe
2 was prepared from melt using a vertical Bridgman technique. The crystal was characterized by X-ray diffraction and Energy dispersive X-ray fluorescence spectrometer (EDXRF). Electrical conductivity, hall effect, and thermoelectric power (TEP) measurements were performed in the temperature range from 120 to 570
K. Throughout these measurements, various physical parameters such as carrier mobilities, effective masses of charge carriers, diffusion coefficient, relaxation time, and the diffusion length for both majority and minority carriers were estimated. In conjunction with the electrical conductivity and the charge carrier concentration, the TEP is discussed. All crystals were found to be of p-type conductivity.