Abstract
Films of graphene oxide (GO) and amide functionalized graphene oxides (AGOs) were deposited on SiO2/Si(100) by spin coating and were thermally annealed at different temperatures. Sheet resistance of GO and AGOs films was measured using four probe resistivity method. GO an insulator at room temperature, exhibits decrease in sheet resistance with increase in annealing temperature. However, AGOs' low sheet resistance (250.43 Omega) at room temperature further decreases to 39.26 Omega after annealing at 800 degrees C. It was observed that the sheet resistance of GO was more than AGOs up to 700 degrees C, but effect was reversed after annealing at higher temperature. At higher annealing temperatures the oxygen functionality reduces in GO and sheet resistance decreases. Sheet resistancewas found to be annealing time dependent. Longer duration of annealing at a particular temperature results in decrease of sheet resistance. (C) 2015 Elsevier B.V. All rights reserved.