Abstract
A Schottky barrier diode with high barrier height injects minority carriers at the forward biased condition. With injection of minority carriers the current density-voltage characteristics are altered significantly from that of the conventional exponential relationship. A model incorporating drift and diffusion currents for both holes and electrons, carrier recombination within the drift region and also the blocking properties of the low-high (n(-)n(+)) interface is developed. The previous works on high barrier Schottky diodes used empirical expressions to combine the high injection model with the low injection model in order to study its behaviour at intermediate levels of injection. Whereas in the present work, a boundary condition is applied to combine the high injection model with an intermediate injection model. To combine an intermediate level model with a low injection level model, another boundary condition is introduced. The present work provides solutions for important physical quantities such as the minority carrier profile and current within the drift region, injection ratio and storage time.