Electrical characterization of AlGaN/GaN/Si high electron mobility transistors

H. Mosbahi; M Gassoumi; A. Guesmi; N. Ben Hamadi; M.A. Zaidi; Chemistry Department, College of Science, IMSIU (Imam Mohammad Ibn Saud Islamic University), P.O. Box 5701, Riyadh 11432, Saudi Arabia

doi:10.15251/JOR.2022.182.159

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Electrical characterization of AlGaN/GaN/Si high electron mobility transistors

Journal article

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Electrical characterization of AlGaN/GaN/Si high electron mobility transistors

H. Mosbahi, M Gassoumi, A. Guesmi, N. Ben Hamadi, M.A. Zaidi and Chemistry Department, College of Science, IMSIU (Imam Mohammad Ibn Saud Islamic University), P.O. Box 5701, Riyadh 11432, Saudi Arabia

Journal of Ovonic Research, Vol.18(2), pp.159-165

12/04/2022

DOI: https://doi.org/10.15251/JOR.2022.182.159

Abstract

AlGaN/GaN/Si HEMTs have been investigated using current-voltage-temperature and CDLTS measurements.As has been found from current voltage measurements, parasitic effects were revealed indicating the presence of traps in HEMT device. As a result, the origins of traps are determined from CDLTS experiments.

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Title: Electrical characterization of AlGaN/GaN/Si high electron mobility transistors
Creators - without role: H. Mosbahi
M Gassoumi
A. Guesmi
N. Ben Hamadi
M.A. Zaidi
Chemistry Department, College of Science, IMSIU (Imam Mohammad Ibn Saud Islamic University), P.O. Box 5701, Riyadh 11432, Saudi Arabia
Publication Details: Journal of Ovonic Research, Vol.18(2), pp.159-165
Identifiers: 9915921908331
Academic Unit: Imam Mohammad Ibn Saud Islamic University (IMSIU)
Language: English
Resource Type: Journal article