Abstract
The electrical and photovoltaic properties of n-Si/Copper phthalocyanine hybrid heterojunction device have been investigated by current-voltage and capacitance-voltage measurements. The ideality factor of the diode was found to be 2.08, suggesting that the heterojunction diode indicates a non-ideal diode behaviour. At higher voltages, the space charge limited-conduction mechanism is dominant in the diode. The series R-s and shunt resistance R-sh values for the diode were found to be 6.97x10(4) Omega and 1x10(8) Omega, respectively. The photocurrent in the reverse direction of the diode increases with illumination intensity, n-Si/Copper phthalocyanine heterojunction diode gives an open-circuit voltage of 0.092 V and a short-circuit current of 0.08 mu A at light intensity of 6 mW/cm(2).