Abstract
The principal properties of the CuInGaSe2 (CIGS) crystals were investigated in this work by using temperature-dependent electrical and Hall effect. CIGS crystals were developed effectively with the modified Bridgman strategy. The electrical conductivity and Hall effect measurements have been explored in the investigated temperature range was between 198 K and 388 K. Various physical parameters such as mobility carrier, resistivity, carrier concentration, and the coefficient of the Hall effect and conductivity were estimated for the majority and for minority carriers. The estimates of DC electrical conductivity were made using traditional two-probe technique for CIGS crystals. Consequently, the activation energies were determined by investigating temperature dependence of DC conductivity. The results of Hall effect measurements of CIGS crystals show that all samples were (p-type), the carrier concentration, and Hall mobility are unequivocally reliant on the temperature. For the first time, complete pictures for the main physical parameters like as hole's diffusion coefficient, the mean free time, and the diffusion length of the holes for our crystal were determined by investigating DC electrical conductivity and Hall effect.