Abstract
The dc conductivity (sigma) and thermoelectric power (TEP) have been measured for the bulk binary alloy Ge40Te60 and ternary alloy Ge38Sn2Te60. X-ray diffraction confirms that the samples are polycrystalline. The measurments were carried, out in the temperature range 133 < T < 400 K. Variation of electrical conductivity with ambient temperatures (T) proved the semiconductor behaviour for all range of T for both materials. With annealing time (t(an)), the electrical conduction activation energy (E-sigma) has been found to be with range from 0.11 x 10(-3) eV-63.3 x 10(-3) eV for Ge40Te60 and from 0.95 x 10(-3) to 52.93 x 10(-3) eV while the thermo-electric power activation energy (E-S) has been found to be in the range 2.28 x 10(-3)-39.3 x 10(-3) eV and 1.58 x 10(-3)-34.2 x 10(-3) eV for two alloys, respectively.