Abstract
Five compositions of Ge
14Se
86−
x
Tl
x
(
x
=
20%, 22%, 23.5%, 26.8%, and 28%) are prepared using the melt-quenching technique. Thin films of thickness
d
=
15, 30, 60, 90, 120, and 180
nm were deposited using electron-beam evaporation technique. All the films showed a non-Ohmic behavior. At higher range of ambient temperature, the activation energy Δ
E
σ
was studied as a function of the coordination number
r, average number of constraints
N
cos and heat of atomization
H
s. Mott's parameters of the system Ge
14Se
86−
x
Tl
x
were studied at lower range of temperature. The effect of annealing temperature
T
ann on the activation energy was taken in consideration.