Abstract
In this paper, porous silicon (PS) was prepared in a double-tank cell using the electrochemical corrosion method. Subsequently, different metal films for electrical contacts were deposited on the PS samples by magnetron sputtering to form the M/PS/Si microstructure. The PS surface morphology was characterized by SEM. The electrical properties of the M/PS/Si microstructure were studied through the I-V characteristic tests. It was shown that Pt can form ohmic contact with PS. The I-V characteristic curves were formed from two parts:linear part and nonlinear part. However, Cu formed Schottky contact with PS and its I-V curves showed rectification characteristics. The rectification ratio decreased when the porosity of the PS increased.