Abstract
The joint effect of the heat transfer and the electronic properties in the InGaN/GaN based quantum well (QW) heterostructures has been investigated theoretically and numerically. One-dimensional Schrodinger equation solver coupled with Poisson equation solver and Dual-phase-lagging (DPL) heat conduction solver has been developed. The numerical results suggest that the DPL heat conduction equations capture the microscale responses caused by the phonon-electron interaction. Both effects of the polarization charge and conduction band offset between the InGaN/GaN interfaces lead to the creation of the two-dimensional electron gas (2DEG) on the lower interface of the QW. It is found that the 2DEG density at the triangular quantum well increases with increasing Indium (In) composition. This increase is the same for the conduction band offset and the electron density. As a consequence, an increase of the heat dissipation and the temperature is observed at the lower interface of the quantum well.