Abstract
Compositionally modulated InSb nanowires (200 nm in diameter) were electrodeposited from acidic chloride baths using anodized alumina membrane as templates The compositionally modulated InxSb1-x (x similar to 0.3, x similar to 0.5) nanowires were synthesized by applying potential pulses between -0.6 V and -1.8 V The segment thickness was controlled down to tens of nm by adjusting the deposition time. In this paper, we report the characteristics of the junctions by using tunneling AFM, which utilizes a conductive AFM probe to detect current passing through the sample and the probe while simultaneously acquiring a topographic image. Preliminary tunneling AFM measurements taken at room temperature of a 200 nm homoiunction InSb Nanowire shows that the current voltage characteristics of the two different segments exhibit a device resistance dependence that is proportional to the Sb content of the device.