Abstract
The anodic etching of n+-type GaAs (100) substrate in HCl aqueous solution has been investigated experimentally using an in situ current–voltage J (V) and capacitance–voltage C (V) measurements. In situ current–voltage, J (V), characteristics of the n+-GaAs/HCl interface exhibit the presence of three potential regions, which are attributed to different reaction mechanisms between HCl and n+-type GaAs surface. Also, current peaks appear in the J (V) characteristics which delimit the different potential regions. According to the Mott–Schottky relation, the characteristic C−2 (V) exhibits the presence of two linear regions separated by a shoulder at about 1.15V. This shoulder indicates the formation of porous GaAs/HCl interface. Scanning electron microscopy (SEM) images shows that GaAs etched in HCl can produce various surface morphologies depending on the anodization current density. Reasonable assumptions on the dissolution mechanisms according to the variety of morphologies are given.