Abstract
A 10-band k.p model has been adopted to study the electronic transport properties of dilute III-V-nitride alloys. The N incorporation into III-V material causes a significant band gap reduction. The shapes of electrons effective mass is investigated as a function of N concentration. The mobility of electron mu(e) in GaNxAs1 - x, InNxP1-x, InNxAs1 - x and InNxSb1 - x shows a significant decrease for nitrogen composition less than 1%. In the range 1-5% observed in InNxP1 - x, InNxAs1 - x and InNxSb1 - x, however, there is a slow increase. In contrast the modification of electrons mobility affects profoundly the electron conductivity. The variation of electron conductivity as function of N composition is shown as well.