Electron spin resonance investigation of hole trapping in reoxidized nitrided silicon dioxide

Journal article

Peer reviewed

I. A Chaiyasena, P. M Lenahan and G. J Dunn

Journal of applied physics, Vol.72(2), pp.820-821

15/07/1992

Abstract

Color centers and other defects

Condensed matter: electronic structure, electrical, magnetic, and optical properties

Electron paramagnetic resonance and relaxation

Exact sciences and technology

Magnetic resonances and relaxations in condensed matter, mössbauer effect

Physics

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Title: Electron spin resonance investigation of hole trapping in reoxidized nitrided silicon dioxide
Creators - without role: I. A Chaiyasena - Pennsylvania State University
P. M Lenahan - Pennsylvania State University
G. J Dunn - Pennsylvania State University
Publication Details: Journal of applied physics, Vol.72(2), pp.820-821
Publisher: American Institute of Physics
Identifiers: 9924810708331
Academic Unit: Prince Mohammad Bin Fahd University
Language: English
Resource Type: Journal article