Abstract
•Al/MnSe2/p-Si/Al photodiode were fabricated.•The photodiode works in photoconducting mode.•The prepared photodiode can be utilized in photovoltaic applications.
In this study, the MnSe2 was synthesized by via hydrothermal method. The MnSe2 film was covered on p-Si substrate by spin-coating technique. After the aluminum metal contacts were taken, the Al/MnSe2/p-Si/Al structure was fabricated. The MnSe2 film was investigated by energy-dispersive X-ray (EDX or EDS), ultraviolet-visible (UV–Vis) spectroscopy and scanning electron microscopy (SEM). The current-voltage (I-V) attributes of the device were examined under dark and diversified illumination intensities. The reverse current measured under illumination was observed to be higher than dark condition. This situation approves that the prepared device displays a photoconducting behavior. Transient measurements was performed under various illumination intensities. Moreover, the capacitance/conductance-voltage (C/G-V) attributes were analyzed under various frequencies. C and G were also observed to be quite sensitive to frequency and applied voltage. The obtained results indicate that the prepared device can be utilized for photovoltaic application.
[Display omitted]