Abstract
Fabrication, structural and electrical characterization of 2,7,12,17-tetra-tert-butyl-5,10,15,20-tetraaza-21H,23Hporphine (TTBTP) films for their application in photovoltaic device have been investigated. The atomic force microscopy showed that our synthesized film has an average grain size and roughness of 152 nm and 31.35 nm, respectively. The capacitance-voltage and current density-voltage characteristics of TTBTP/n-Si heterojunction (HJ) have been extensively researched. The TTBTP/n-Si HJ thin film was characterized by a contact barrier of 0.70 eV and a rectification ratio of 663 at 300 K. The conduction mechanisms and the fundamental diode parameters, for example, series resistance, ideality factor, and barrier height are calculated. The fabricated diode parameters show a temperature dependency in the temperature range of 300-383 K. Under the light, the TTBTP/ n-Si HJ demonstrates photovoltage conduct from which the photovoltaic parameters are assessed. The opencircuit voltage, short circuit current, and power conversion efficiency are evaluated as 0.68 V, 8.06 mA/cm2, and 2.38%, respectively.