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Electronic band structure of stepped Si(100) surfaces
Journal article   Peer reviewed

Electronic band structure of stepped Si(100) surfaces

S A Salman, S Katircioglu and S Erkoc
Surface review and letters, Vol.8(1-2), pp.61-66
04/2001
DOI: https://doi.org/10.1016/S0218-625X(01)00083-5

Abstract

Chemistry Chemistry, Physical Physical Sciences Physics Physics, Condensed Matter Science & Technology
We have investigated the electronic band structure of five different stepped Si(100) surfaces by the empirical tight binding (ETB) method. It has been found that the interaction states have approximately the same energy values for the stepped surfaces with a similar dimer bond nature on the terraces. The single layer stepped models show different density-of-states features than the double layer stepped models.

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