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Electrostatic Modulation of LaAlO3/SrTiO3 Interface Transport in an Electric Double‐Layer Transistor
Journal article   Peer reviewed

Electrostatic Modulation of LaAlO3/SrTiO3 Interface Transport in an Electric Double‐Layer Transistor

Wei‐Nan Lin, Jun‐Feng Ding, Shu‐Xiang Wu, Yong‐Feng Li, James Lourembam, Santiranjan Shannigrahi, Shi‐Jie Wang and Tom Wu
Advanced materials interfaces, Vol.1(1), p.n/a
13/02/2014
DOI: https://doi.org/10.1002/admi.201300001

Abstract

electric double‐layer transistor Kondo effect LaAlO3/SrTiO3 interface oxide heterostructure percolation transition
Electrostatic modulation on the two‐dimensional transport of the LaAlO3/SrTiO3 interface in an electric double‐layer transistor is demonstrated. The induced insulator‐to‐metal transition exhibits the nature of charge‐density‐driven percolation, and the Kondo effect governs the low‐temperature interface transport under high bias. The results underscore the important role of inhomogeneity and localized spins in the two‐dimensional transport of oxide interfaces.

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