Abstract
We have investigated the electrothermal behavior in Cu/ZrO2/Pt conductive bridge random access memory (CBRAM) memory based on the dual-phase-lag thermal model. We have studied the effects of the geometry of the conductive filament (CF) and of the applied voltage on the distribution of both the internal temperature and of the electric field at different delay times. The simulated results are compared with recently published works using classical Fourier's law. This dual-phase-lag (DPL) model reveals that along the CF during the reset process, the temperatures are lower than those found using Fourier's law in the transient state and increase the reached time of the steady state. Further, the displacement of the hot spot over time is almost negligible relatively to Fourier's law. This study shows that the DPL model may be more useful in assessing the thermoelectric behavior and nanoscale mathematical design of CBRAM memory. Finally, in the computational stage, the finite element method was applied to solve the nonlinear equations.