Abstract
The electron and hole selective contact (SC) plays a pivotal role in the performance of perovskite solar cells. In order to separate the interfacial phenomenon from bulk, the influence of charge SC is elucidated, by means of impedance spectroscopy. The specific role played by TiO2 and Spiro-OMeTAD as electron and hole SC in perovskite solar cells is investigated at short circuit condition at different temperatures. The methylammonium lead triiodide (MAPbI(3)) and mixed perovskite of formamidinium lead iodide and methylammonium lead bromide namely; (FAPbI(3))(0.85)(MAPbBr(3))(0.15) are probed and parameters such as charge carrier mobility, recombination resistance, time constant, and charge carrier kinetics in perovskite layer and at the interface of perovskite/SC are elucidated. Charge carrier mobility in mixed perovskite is found to be nearly two order of magnitude higher as compared to MAPbI(3). Moreover, the carrier mobility in devices with only electron SC is found to be higher as compared only hole SC. The charge accumulation at TiO2/perovskite/Spiro-OMeTAD interfaces is studied via frequency dependent capacitance, revealing higher charge accumulation at perovskite/Spiro-OMeTAD than at TiO2/perovskite interface. By performing varying temperature frequency dependent capacitance measurements the distribution of density of state within the bandgap of the perovskites, the emission rate of electrons from the trap states and traps activation energy is determined.