Abstract
Conjugated polymers have gained momentum as serious contenders for next‐generation flexible electronics, but their susceptibility to water represents a major problem. Atmospheric water is ubiquitous and its inadvertent diffusion into polymeric devices generates charge carrier traps, reducing their performance and stability. A good understanding of the physical processes associated with the presence of water is therefore necessary in order to be able to suppress the related trapping events and enable stable, high‐performance devices. Here, evidence is shown that water introduces traps in the bandgap of organic semiconductors and the impact of these traps on the electrical properties of polymer organic field‐effect transistors (OFETs) based on indacenodithiophene‐co‐benzothiadiazole (IDT‐BT) is investigated. Monitoring device parameters and the trap density of states (t‐DOS) during moisture extrication reveals the existence of two types of water‐related traps: shallow traps originating from water inhabiting the voids of the polymer film and deeper traps arising from chemisorbed water present at the dielectric/polymer interface. A trap passivation method based on flame‐annealing is introduced to eliminate the interfacial traps. As a result, stable OFETs, with threshold voltage shifts less than ΔVth = −0.3 V and constant mobilities (<10% variation) after three months of storage, are fabricated.
Trap density of states analysis uncovers the role of water‐related traps in the stability of polymer field‐effect transistors. A surface trap passivation strategy is introduced to achieve devices that are stable for nearly three months.