Abstract
In this review, synthesis of pristine MXenes are briefly introduced and their properties are discussed focusing on the optoelectronic aspects, which are fundamental for the photoelectric performance. Recent advances of MXene-based photodetectors are comprehensively summarized based on various MXenes. Finally, the perspectives for future challenges and opportunities of MXene-based photodetectors are provided, which may enlighten their further development.
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The development and applications of transition metal carbides, nitrides and carbonitrides, commonly denoted as MXenes, have during the last few years rapidly expanded in various technological fields owing to their unique and controllable properties. These materials exhibit competing performance comparing with traditional materials and have created numerous opportunities for technology markets. Taking the advantage of excellent optoelectronic features, MXenes have been utilized for the construction of photodetectors with various structures and unique functionalities. While the application of MXenes in this area can be traced back to 2016, we have during the recent three years witnessed a dramatic development of MXene-based photodetectors, calling for a timely review to guideline their future direction. In this work, synthetic strategies of pristine MXenes are briefly introduced and their properties are discussed focusing on the optoelectronic aspects that are fundamental for the photoelectric conversion. Recent advances of MXene-based photodetectors are comprehensively summarized based on different types of MXenes and innovative designs of device construction. Finally, we provide perspectives for future challenges and opportunities of MXene-based photodetectors, which may enlighten their further development.