Abstract
In this paper we investigated the diffusion of Ag adatom by computing the energy barriers for many elementary diffusive processes which are likely to happen near to the step edge on Cu (110). The barriers are calculated by means of molecular dynamics simulation by using embedded atom potentials. The proximity to steps alters these barriers considerably, and very different results may be expected. In fact, our numerical calculations show that the diffusion via jump process along step edge is predominant for Ag/Cu(110) and the diffusion over the step occurs sometimes, but only via exchange mechanisms. The adatom diffusion across channels is difficult due to the high value of activation energy required (around 1eV). Furthermore, we found the Ehrlich–Schwoebel barrier for diffusion around 120meV in order to descend via exchange process and of the order of 170meV via hopping mode. This aspect may have a strong influence on the growth character. In general our results suggest that, for our metal system, diffusion mechanism may be important for mass transport across the steps. Implications of these findings are discussed.
•Study of adatom diffusion near the step edge•The diffusion along channel is enhanced through jump process.•Arrhenius law is satisfied for a wide range of temperature (310–600K).