Abstract
We perform photoluminescence measurement of GaAs:Er,O under a pulsed magnetic field up to 60
T and succeed to obtain the magnetic field dependence of three main photoluminescence peaks. We also estimate the energy splitting of states
4
I
15/2 and
4
I
13/2 using the crystal field theory. Theoretically calculated energy differences between the lowest state of
J=
13
2
and the lowest three states of
J=
15
2
are in good agreement with experimentally obtained energy of three main PL peaks. We discuss the local configuration around the luminescent Er-2O center. By using parameters in the crystal field calculation, our analysis suggest that not only O
2− sites but also As
3− sites adjacent to Er
3+ ion are displaced from their original lattice positions.
► We study the energy structure of Er
3+ ion in GaAs with O under a high magnetic field. ► Photoluminescence peaks are observed up to 60
T using a pulsed magnetic field. ► Photoluminescence peaks are discussed using the crystal field calculation results. ► The local configuration around the luminescent center Er is suggested.