Abstract
We present rigorous investigations of the geometric phase in semiconductor microcavities. The effects of excitonic spontaneous emission, initial state setting and cavity dissipation have been discussed. It is shown that the geometric phase decays exponentially due to the presence of excitonic spontaneous emission. More importantly, the inclusion of the phase shift leads to an enhanced sensitivity for the control of the geometric phase evolution and system dynamics. (C) 2014 Elsevier B.V. All rights reserved.