Abstract
Ga-doped In2O3(ZnO)(3) nanobelts were successfully fabricated via a simple chemical vapor deposition (CVD) process. The morphology, microstructure, and composition of the nanobelts were characterized by scanning electron microscopy, high resolution transmission electron microscopy, selected area electron diffraction, and X-ray photoelectron spectroscopy. The results confirm the formation of In2O3(ZnO)(3) superlattice nanobelts doped with Ga. The field-emission studies show a low turn-on electrical field, high field enhancement factor, and a good stability of the emission current. These results are valuable for the design, fabrication, and optimization of field emitters.