Abstract
This paper investigates the effect of hear treatment with a phosphorus rich porous silicon layer on the electrical properties Czochralski (CZ), p-type monocrystalline silicon (c-Si) wafer. Phosphorus diffusion into porous silicon layer can play a crucial role for gettering metallic impurities. Further, the variable temperature process (VTP) was presented to provide higher gettering efficiency than the constant temperature process (CTP). We estimated with a Quasi-Steady-State Photo-Conductance (QSSPC) technique the effective minority carrier lifetime values tau(eff). The Light-Beam-Induced-Current measurements (LBIC) have been executed to estimate the diffusion length (L-D). In the I-V characteristics, we observed a significant increase in V-oc and J(sc). Particularly; we can say that the VTP may be required to provide the highest efficiency in devices. (C) 2015 Elsevier B.V. All rights reserved,