Abstract
In this study, the Schottky diodes (SDs) based on an interfacial layer of strontium oxide (SrO) thin film were fabricated. Thin films (TFs) were coated on glass and silicon substrates by low-cost spray pyrolysis coating technique with varying substrate temperatures of 350, 400, 450, and 500°C. Structural, surface morphology, optical, and electrical characteristics of SrO TFs were investigated. In particular, the I–V characteristics of Cu/SrO/n-Si diodes in dark and light excitations were analyzed. The maximum barrier height (ΦB) for the diode fabricated at 500°C under Xenon lamp light irradiation was observed at 0.82 eV. Also, near ideal ideality factor (n) of the diode parameters, it was found at highest substrate temperature at 500°C. The results show that diodes are more fitting for the improvement of good quality photodiodes as well photodetector applications.
•A new Schottky diode (SD) using SrO thin films with smooth surface hillock has successfully fabricated on the n-Si wafer substrate.•The SrO film prepared at high substrate temperature of 500 °C shows the Eopt values of 3.73 eV, maximum barrier height (Φb) of 0.82 eV, and near ideal ideality factor (n) of the diode parameters.•Cu/SrO/n-Si-based SD have been successfully fabricated by JNSP technique at different substrate temperatures.