Abstract
In this paper, we report the effect of Ga+ ion irradiation on anomalous Hall effect (AHE) and longitudinal resistivity $(\rho_{\textit{xx}})$ in [Co(3 Å)/Pd(5 Å)]80 multilayer and Co42Pd58 alloy. 4- and 2-fold increases in anomalous Hall resistivity $(\rho_{\textit{AH}})$ in the Co/Pd multilayer and CoPd alloy have been observed after irradiations at doses of $2.4\times 10^{15}$ and $3.3\times 10^{15}\ \text{ions/cm}^{2}$ , respectively. Skew scattering and side jump contributions to AHE have been analyzed based on the scaling relationship $\rho_{\textit{AH}}=a\rho_{\textit{xx}}+b\rho_{\textit{xx}}^{2}$ . For the Co/Pd multilayer, AHE is mainly affected by ion irradiation-induced interface diffusion and defects. For the CoPd alloy, the increase in doses above $1.5\times 10^{15}\ \text{ions/cm}^{2}$ induces a sign change in skew scattering, followed by the skew scattering contribution to AHE overwhelming the side jump contribution, this phenomenon should be attributed to irradiation-induced defects and modifications in chemical ordering.