Abstract
Cerium co-doped CdO:Zn (Ce@CdO:Zn) transparent conducting oxide films were deposited onto glass by a cost-effective nebulizer spray procedure. X-ray diffraction (XRD) investigation on films shows that formation of cubic structure with (111) and (200) orientations for CdO:Zn and Ce@CdO:Zn films, respectively. Surface topography study discovered the foundation of compact grains for 1.5 wt.% Ce-doped film. EDX spectrum possesses the Cd, Zn, and Ce in Ce doped CdO:Zn film. Ce doped films exhibited maximum transparency and highest bandgap (Eg) value in comparison with pristine CdO:Zn film and the Eg values are noticed between 2.64–2.87 eV. Hall-Effect study evinced that Ce doping enhanced the contents of the carrier and lessen the electrical resistivity. The ρ values cut from 9.84 × 10–3 Ω cm to 6.40 × 10−4 Ω cm when Ce % rise from 0–1.5 wt.%. The obtained carrier concentration value of CdO:Zn is 4.02 × 1019 cm−3 and enlarged to 8.72 × 1020 cm−3 for 1.5 wt.% Ce co-doped film. The Figure of merit amplified from 1.1–9.4 × 10−4 Ω−1 on growing the Ce content to 1.5 wt.% from 0.