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Enhancement of magnetoresistance in spin valves with ion sputtered Si substrates
Journal article   Peer reviewed

Enhancement of magnetoresistance in spin valves with ion sputtered Si substrates

Z.B Guo, K.B Li, G.C Han, J.J Qiu, Y.K Zheng, Z.Y Liu and Y.H Wu
Journal of magnetism and magnetic materials, Vol.272(III), pp.1885-1886
01/05/2004
DOI: https://doi.org/10.1016/j.jmmm.2003.12.767

Abstract

Giant magnetoresistance Hysteresis loops Magnetic properties of interfaces
The pattern of dots with height about 1.2 nm is formed on Si substrates by ion sputtering. Top, bottom spin valves, and bottom spin valves with a nano-oxide layer are fabricated on both non-ion sputtered and ion sputtered Si substrates. Magnetoresistance ratio increase around 10% has been achieved in the spin valves on the ion sputtered substrates.

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