Abstract
A chemical synthesis method was used to produce Cr-doped SnO2 nanoparticles. By using the TEM technique, the nanocrystalline nature of the Sn1-xCrxO2 (0.0 < x < 0.1) nanopowder was confirmed. With different Cr concentrations, the electron beam deposition technique was used to deposit a series of Sn1-xCrxO2 nanocrystalline thin films on a silica substrate. X-ray diffraction (XRD), atomic force microscopy (AFM), spectroscopic ellipsometry (SE), and vibrating sample magnetometry (VSM) techniques were used to examine the physical properties of the deposited films. The nanocrystalline nature of the Sn1-xCrxO2 (0.0 < x < 0.1) thin film was confirmed by XRD and AFM morphology measurements. The XRD spectrum of the Sn1-xCrxO2 nanocrystalline film demonstrated a tetragonal crystal structure with no detectable extra phases. The optical measurements showed that as the Cr content increases, the direct optical energy gap Eg decreases without any sign of solubility limit up to x < 0.1. The decrease in Eg is attributed to the sp-d exchange interaction. Also, the spectral behavior of the refractive index dispersion of the Cr-doped SnO2 indicates that as the Cr dopant increases, the refractive index of the deposited film also increases, which is attributed to the increase in the polarizability. Moreover, as the Cr content raises the atomic number, the density of the deposited film increases from 1.43 x 1022 cm-3 for SnO2 to 1.57 x 1022 cm-3 for Sn0.9Cr0.1O2. Further, the behavior of the refractive index dispersion of the deposited film was revealed using a single oscillator model proposed by Wemple-DiDomenico (WDD). Our calculations revealed that as the Cr concentration increases, the value of oscillator energy Eo decreases owing to the decrease in Eg, whereas the value of dispersion energy Ed increases because of the chemical structural changes such as the lattice parameters. Finally, the magnetic studies revealed that incorporating a small fraction of Cr into SnO2 produces room temperature ferromagnetism in the film, which is gradually suppressed by a further increase in Cr doping. These findings indicate that the Cr-doped SnO2 film can be recommended for optoelectronic and spintronic device applications.