Abstract
This work presents additional physical results about the enhancement of the photoluminescence property of hybrid structures using single walled carbon nanotubes/pyramidal porous silicon surface, in comparison with what has already been published on these structures in terms of synthesis conditions and FTIR investigations as reported recently by the same authors in Journal of Alloys and Compounds 694 (2017) 1036 1044. Herein, the effect of the single walled carbon nanotubes (SWCNTs) layer on the optical properties of pyramidal Porous Silicon (pPSi) in hybrid SWCNTs/pPSi structure synthetized by chemical and electrochemical etching of silicon wafer was studied. Using both scanning electron mi croscopy (SEM), SWCNTs formed a thin film on pPSi surface and they are partly embedded in its pores. An analysis of Raman spectra for the realized structures confirmed the passivation of pPSi surface by SWCNTs film. The surface bond configurations were also monitored. Moreover, SWCNTs modified Pho toluminescence (PL) spectrum of pPSi by shifting PL peaks towards high energies, showed that the defect created in the materials can result in an efficient and stabilized photoluminescence response on Silicon (Si).