Epitaxial lateral growth of m-plane GaN and Al 0.18Ga 0.82N on m-plane 4H-SiC and 6H-SiC substrates

T. Kawashima; T. Nagai; D. Iida; A. Miura; Y. Okadome; Y. Tsuchiya; M. Iwaya; S. Kamiyama; H. Amano; I. Akasaki

doi:10.1016/j.jcrysgro.2006.10.096

Back

Epitaxial lateral growth of m-plane GaN and Al 0.18Ga 0.82N on m-plane 4H-SiC and 6H-SiC substrates

Journal article

Peer reviewed

Epitaxial lateral growth of m-plane GaN and Al 0.18Ga 0.82N on m-plane 4H-SiC and 6H-SiC substrates

T. Kawashima, T. Nagai, D. Iida, A. Miura, Y. Okadome, Y. Tsuchiya, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki

Journal of crystal growth, Vol.298, pp.261-264

2007

DOI: https://doi.org/10.1016/j.jcrysgro.2006.10.096

Abstract

A3. Organometallic vapor phase epitaxy

A3. Selective epitaxy

B1. Nitrides

We succeeded in growing low-defect-density GaN and Al 0.18Ga 0.82N on a grooved m-plane GaN by optimizing growth conditions. A reduction in the density of dislocations was confirmed by cross-sectional transmission electron microscopy (TEM). m-Plane GaN having an atomically flat surface was successfully grown. An improvement in the luminescence intensity of GaN and Al 0.18Ga 0.82N was confirmed by photoluminescence (PL) and cathodoluminescence (CL) measurements.

Metrics

1 Record Views

Details

Title: Epitaxial lateral growth of m-plane GaN and Al 0.18Ga 0.82N on m-plane 4H-SiC and 6H-SiC substrates
Creators - without role: T. Kawashima - Meijo University
T. Nagai - Meijo University
D. Iida - Meijo University
A. Miura - Meijo University
Y. Okadome - Meijo University
Y. Tsuchiya - Meijo University
M. Iwaya - Meijo University
S. Kamiyama - Meijo University
H. Amano - Meijo University
I. Akasaki - Meijo University
Publication Details: Journal of crystal growth, Vol.298, pp.261-264
Publisher: Elsevier B.V
Identifiers: 9943224208331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Journal article