Estimation of the number of interstitial atoms injected in silicon during thin oxide formation

Journal article

Peer reviewed

D Skarlatos, M Omri, A Claverie and D Tsoukalas

Journal of the Electrochemical Society, Vol.146(6), pp.2276-2283

01/06/1999

Abstract

Condensed matter: structure, mechanical and thermal properties

Cross-disciplinary physics: materials science; rheology

Defects and impurities in crystals; microstructure

Exact sciences and technology

Materials science

Physics

Point defects (vacancies, interstitials, color centers, etc.) and defect clusters

Structure of solids and liquids; crystallography

Surface cleaning, etching, patterning

Surface treatments

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Title: Estimation of the number of interstitial atoms injected in silicon during thin oxide formation
Creators - without role: D Skarlatos - National Centre of Scientific Research "Demokritos"
M Omri - Centre d’Élaboration de Matériaux et d’Études Structurales
A Claverie - Centre d’Élaboration de Matériaux et d’Études Structurales
D Tsoukalas - National Centre of Scientific Research "Demokritos"
Publication Details: Journal of the Electrochemical Society, Vol.146(6), pp.2276-2283
Publisher: Electrochemical Society
Identifiers: 9935091308331
Academic Unit: King Abdulaziz University
Language: English
Resource Type: Journal article