Etch characteristics of GaN and BN materials in chlorine-based plasmas

Journal article

Peer reviewed

N Medelci, A Tempez, D Starikov, N Badi, I Berishev and A Bensaoula

Journal of electronic materials, Vol.29(9), pp.1079-1083

01/09/2000

Abstract

Applied sciences

Cross-disciplinary physics: materials science; rheology

Electronics

Exact sciences and technology

Materials science

Microelectronic fabrication (materials and surfaces technology)

Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Physics

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

Surface cleaning, etching, patterning

Surface treatments

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Title: Etch characteristics of GaN and BN materials in chlorine-based plasmas
Creators - without role: N Medelci - University of Houston
A Tempez - University of Houston
D Starikov - University of Houston
N Badi - University of Houston
I Berishev - University of Houston
A Bensaoula - University of Houston
Publication Details: Journal of electronic materials, Vol.29(9), pp.1079-1083
Publisher: Institute of Electrical and Electronics Engineers
Identifiers: 9933909108331
Academic Unit: University of Tabuk
Language: English
Resource Type: Journal article