Etching of GaAs by CCl4 and VCl4 in a metalorganic vapor-phase epitaxy reactor

Journal article

Peer reviewed

Journal of crystal growth, Vol.194(3-4), pp.286-291

01/12/1998

Abstract

Cross-disciplinary physics: materials science; rheology

Exact sciences and technology

Materials science

Methods of deposition of films and coatings; film growth and epitaxy

Physics

Surface cleaning, etching, patterning

Surface treatments

Vapor phase epitaxy; growth from vapor phase

3 Record Views

Title: Etching of GaAs by CCl4 and VCl4 in a metalorganic vapor-phase epitaxy reactor
Creators - without role: A Rebey - Laboratoire de Physique des Matériaux, Faculté des Sciences, 5000 Monastir, Tunisie
A Bchetnia - Laboratoire de Physique des Matériaux, Faculté des Sciences, 5000 Monastir, Tunisie
B EL JANI - Laboratoire de Physique des Matériaux, Faculté des Sciences, 5000 Monastir, Tunisie
Publication Details: Journal of crystal growth, Vol.194(3-4), pp.286-291
Publisher: Elsevier
Identifiers: 9928798808331
Academic Unit: Qassim University
Language: English
Resource Type: Journal article