Abstract
The III-nitride nanoarchitectures have shown innumerable fascinating peculiarities and conceivable applications in optoelectronic nanodevices. Among them, the geometry of quantum well is considered one of the topmost research and deserve particular attention. Herein, we have originally developed a method for the epitaxial growth of InGaN/GaN quantum well nanopillar arrays on c-sapphire substrate via metal-organic vapor phase epitaxy approach. The influences of the MOVPE growth parameters on the optical behaviour of the InGaN/GaN QWs have been investigated. The results embarked that the developed InGaN/GaN nanopillars quantum well on c-sapphire may be used as light emitting device under the conditions that the diameter of the pillar should be around 1000 nm and the separation distance among these pillars should be less than 1000 nm. At these optimum conditions the fluorescence microscopy indicated that highly luminescent blue light is observed, implying the possibility of the developed nanopillar to be served as promising LED device.