Abstract
The effect of deposition temperature and film thickness on the work function of
TiSiN
gate electrodes has been studied. It is shown that the work function of
TiSiN
can be tuned from 4.28-
4.74
eV
on
SiO
2
, 4.40-
4.79
eV
on
HfO
2
, and 4.44-
4.83
eV
on
HfSiO
x
. For high-
k
dielectrics, the work function can be tuned by
200
meV
on each side of the band gap, making it a suitable electrode for fully depleted silicon-on-insulator devices. Furthermore,
TiSiN
deposition at high temperature increases the work function to
4.87
eV
while Si implantation increases it to
4.93
eV
, making
TiSiN
a good
p
-type metal candidate.