Evolution of Filament Formation in Ni/HfO2/SiOx/Si-Based RRAM Devices

Journal article

Peer reviewed

Xing Wu, Sen Mei, Michel Bosman, Nagarajan Raghavan, Xixiang Zhang, Dongkyu Cha, Kun Li and Kin Leong Pey

Advanced electronic materials, Vol.1(11), p.n/a

01/11/2015

Abstract

Materials Science

Materials Science, Multidisciplinary

Nanoscience & Nanotechnology

Physical Sciences

Physics

Physics, Applied

Science & Technology

Science & Technology - Other Topics

Technology

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Title: Evolution of Filament Formation in Ni/HfO2/SiOx/Si-Based RRAM Devices
Creators - without role: Xing Wu - East China Normal University
Sen Mei - Singapore University of Technology and Design
Michel Bosman - Agency for Science, Technology and Research
Nagarajan Raghavan - Singapore University of Technology and Design
Xixiang Zhang - King Abdullah University of Science and Technology
Dongkyu Cha - King Abdullah University of Science and Technology
Kun Li - King Abdullah University of Science and Technology
Kin Leong Pey - Singapore University of Technology and Design
Publication Details: Advanced electronic materials, Vol.1(11), p.n/a
Publisher: Wiley
Number of pages: 6
Grant note: ZJURP1300104 / Singapore University of Technology and Design (SUTD)-Zhejiang University (ZJU) Research Collaboration; Singapore University of Technology & Design SUTD; Singapore University of Technology & Design
Identifiers: 9942410308331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Journal article