Abstract
The effects of post-growth thermal annealing of InAs QD with the high in-content strain reducing layer (SRL) on the temperature dependent PL properties have been investigated. The as-grown QD have shown an atypical behavior manifested by a sigmoidal emission energy and V-shaped linewidth evolution with temperature. These behaviors have been progressively glossed by subjecting the structure to post growth annealing at 650 degrees C and 750 degrees C for 50 s. The results are discussed in the frame of the localized states ensemble model, which reveals that carriers transfer take place by thermal activation to the continuum states of the strain-reducing layer and subsequent redistribution.