Abstract
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•Nanostructured ZnO:Ce thin films developed by Spray pyrolysis route is reported.•The monophasic ZnO:Ce films were developed.•PL study revealed the existence of three distinct bands at 385, 415, and 490 nm in the developed ZnO:Ce films.•UV photodetection properties of fabricated devices are studied under the irradiation of 365 nm.•PDs parameters like responsivity, detectivity and the external quantum efficiency of the ZnO:Ce(2.0%) are measured as 0.27 AW−1, 63% and 2.18 × 1010 jones.
Recently, n-type ZnO is identified as a promising candidate for ultraviolet (UV) photodetectors (PDs) due to their suitable optoelectronics properties. Hence, in this work we fabricated the ZnO and Ce doped ZnO (ZnO:Ce) based UV Photo detectors by spray pyrolysis technique. Prior to the photodetection studies, the wurtzite structure of ZnO:Ce samples is confirmed by X-ray diffraction analysis. The 2D and 3D topography and morphology of the films are probed by AFM study. Further, the elemental compositions are confirmed with EDX spectrum. The optical studies such as UV–visible absorbance and photoluminescence emission spectra are respectively recorded to find the bandgap and the defect states in ZnO:Ce. Finally, the UV photodetection properties of fabricated thin film devices are studied under the irradiation of 365 nm laser. Photo detector sensing parameters such as responsivity, detectivity and the external quantum efficiency of the ZnO:Ce(2.0%) sample exhibited maximum values of 0.27 AW−1, 63% and 2.18 × 1010 Jones and it proved to be a potential sensor application as UV Photodetector.